KSH210TM
- Mfr.Part #
- KSH210TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A DPAK
- Stock
- 6,747
- In Stock :
- 6,747
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Weight :
- 260.37mg
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 1.4W
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2002
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- -8V
- Base Part Number :
- KSH210
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Factory Lead Time :
- 6 Weeks
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Number of Elements :
- 1
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 45
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power - Max :
- 1.4W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 2
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Frequency - Transition :
- 65MHz
- Collector Emitter Voltage (VCEO) :
- 1.8V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.29.00.95
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 65MHz
- Collector Base Voltage (VCBO) :
- -40V
- Max Collector Current :
- 5A
- Mount :
- Surface Mount
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 25V
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 25V
- Datasheets
- KSH210TM
KSH210TM Documents

PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH210TM Overview
DC current gain in this device equals 45 @ 2A 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.8V @ 1A, 5A.An emitter's base voltage can be kept at -8V to gain high efficiency.As a result, the part has a transition frequency of 65MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 5A volts.
KSH210TM Features
the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
a transition frequency of 65MHz
KSH210TM Applications
There are a lot of ON Semiconductor
KSH210TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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