KSH210TF
- Mfr.Part #
- KSH210TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A DPAK
- Stock
- 26,463
- In Stock :
- 26,463
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -25V
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 65MHz
- Base Part Number :
- KSH210
- Transition Frequency :
- 65MHz
- Collector Emitter Saturation Voltage :
- -1.8V
- Weight :
- 260.37mg
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1.4W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -8V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- -40V
- Max Collector Current :
- 5A
- Element Configuration :
- Single
- Frequency :
- 65MHz
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Height :
- 2.3mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.4W
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 25V
- Current Rating :
- -5A
- JESD-609 Code :
- e3
- Length :
- 6.6mm
- Width :
- 6.1mm
- Collector Emitter Breakdown Voltage :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Collector Emitter Voltage (VCEO) :
- 25V
- hFE Min :
- 45
- Datasheets
- KSH210TF
KSH210TF Documents
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PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH210TF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 45 @ 2A 1V.With a collector emitter saturation voltage of -1.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1A, 5A.If the emitter base voltage is kept at -8V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.A transition frequency of 65MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 5A volts at its maximum.
KSH210TF Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of -1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
KSH210TF Applications
There are a lot of ON Semiconductor
KSH210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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