KSH210TF
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- Mfr.Part #
- KSH210TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A DPAK
- Stock
- 26,463
- In Stock ：
- 26,463
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 65MHz
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 45
- Mount :
- Surface Mount
- Weight :
- 260.37mg
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- -8V
- Published :
- 2002
- Number of Terminations :
- 2
- Base Part Number :
- KSH210
- Collector Base Voltage (VCBO) :
- -40V
- Max Collector Current :
- 5A
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 25V
- Current Rating :
- -5A
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Height :
- 2.3mm
- JESD-30 Code :
- R-PSSO-G2
- Transition Frequency :
- 65MHz
- Max Power Dissipation :
- 1.4W
- Frequency :
- 65MHz
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -25V
- Collector Emitter Voltage (VCEO) :
- 25V
- Collector Emitter Breakdown Voltage :
- 25V
- Width :
- 6.1mm
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Power Dissipation :
- 1.4W
- Collector Emitter Saturation Voltage :
- -1.8V
- Number of Elements :
- 1
- Length :
- 6.6mm
- Terminal Form :
- Gull wing
- Datasheets
- KSH210TF
,%20SC-63.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH210TF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 45 @ 2A 1V.With a collector emitter saturation voltage of -1.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1A, 5A.If the emitter base voltage is kept at -8V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.A transition frequency of 65MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 5A volts at its maximum.
KSH210TF Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of -1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
KSH210TF Applications
There are a lot of ON Semiconductor
KSH210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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