KSH2955TF
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- Mfr.Part #
- KSH2955TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A DPAK
- Stock
- 10,079
- In Stock ：
- 10,079
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- hFE Min :
- 20
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 100V
- Voltage - Rated DC :
- -60V
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 2
- Base Part Number :
- KSH2955
- Contact Plating :
- Tin
- Current Rating :
- -10A
- Collector Base Voltage (VCBO) :
- -70V
- ECCN Code :
- EAR99
- Published :
- 2014
- Transition Frequency :
- 2MHz
- Collector Emitter Saturation Voltage :
- -1.1V
- Gain Bandwidth Product :
- 2MHz
- Number of Elements :
- 1
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Frequency :
- 2MHz
- Current - Collector Cutoff (Max) :
- 50μA
- Weight :
- 260.37mg
- Factory Lead Time :
- 9 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- -5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Power Dissipation :
- 1.75W
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.75W
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 10A
- Datasheets
- KSH2955TF
,%20SC-63.jpg)
PNP 150°C TJ 50μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH2955TF Overview
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1.1V.A VCE saturation (Max) of 8V @ 3.3A, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 2MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 10A volts is possible.
KSH2955TF Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 2MHz
KSH2955TF Applications
There are a lot of ON Semiconductor
KSH2955TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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