KSE5741TU
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- Mfr.Part #
- KSE5741TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 8A TO220-3
- Stock
- 42,920
- In Stock ：
- 42,920
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 4A 5V
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 350V
- Transistor Type :
- NPN - Darlington
- Power - Max :
- 80W
- Current - Collector (Ic) (Max) :
- 8A
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 400mA, 8A
- Supplier Device Package :
- TO-220-3
- Datasheets
- KSE5741TU
NPN - Darlington 150°C TJ TO-220-3 Tube Through Hole
KSE5741TU Overview
DC current gain in this device equals 200 @ 4A 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 400mA, 8A.Product comes in TO-220-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSE5741TU Features
the DC current gain for this device is 200 @ 4A 5V
the vce saturation(Max) is 3V @ 400mA, 8A
the supplier device package of TO-220-3
KSE5741TU Applications
There are a lot of ON Semiconductor
KSE5741TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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