KSE5740TU

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Mfr.Part #
KSE5740TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 300V 8A TO220-3
Stock
14,025
In Stock :
14,025

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
300V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity :
NPN
REACH SVHC :
No SVHC
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 4A 5V
Packaging :
Tube
Max Power Dissipation :
80W
Package / Case :
TO-220-3
Mount :
Through Hole
Lead Free :
Lead Free
Current Rating :
8A
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
8V
Number of Pins :
3
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
300V
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
3V @ 400mA, 8A
RoHS Status :
RoHS Compliant
Collector Emitter Saturation Voltage :
2V
Power Dissipation :
80W
hFE Min :
50
Transistor Type :
NPN - Darlington
Voltage - Rated DC :
300V
Max Collector Current :
8A
Datasheets
KSE5740TU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSE5740TU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:150°C TJ, Number of Pins:3, KSE5740TU pinout, KSE5740TU datasheet PDF, KSE5740TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSE5740TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSE5740TU


NPN - Darlington 150°C TJ 1 Elements TO-220-3 Tube Through Hole

KSE5740TU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 4A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 400mA, 8A.The emitter base voltage can be kept at 8V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

KSE5740TU Features


the DC current gain for this device is 200 @ 4A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 400mA, 8A
the emitter base voltage is kept at 8V
the current rating of this device is 8A


KSE5740TU Applications


There are a lot of ON Semiconductor
KSE5740TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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