KSE5020AS
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- Mfr.Part #
- KSE5020AS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 3A TO126-3
- Stock
- 8,193
- In Stock ：
- 8,193
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector (Ic) (Max) :
- 3A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 300mA, 1.5A
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power - Max :
- 30W
- Voltage - Collector Emitter Breakdown (Max) :
- 500V
- Frequency - Transition :
- 18MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 300mA 5V
- Packaging :
- Bulk
- Datasheets
- KSE5020AS
NPN 150°C TJ 10μA ICBO TO-225AA, TO-126-3 Bulk Through Hole
KSE5020AS Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 300mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 300mA, 1.5A.This device displays a 500V maximum voltage - Collector Emitter Breakdown.
KSE5020AS Features
the DC current gain for this device is 15 @ 300mA 5V
the vce saturation(Max) is 1V @ 300mA, 1.5A
KSE5020AS Applications
There are a lot of ON Semiconductor
KSE5020AS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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