KSD288YTU
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- Mfr.Part #
- KSD288YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 55V 3A TO220-3
- Stock
- 28,013
- In Stock ：
- 28,013
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 25W
- Supplier Device Package :
- TO-220-3
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 3A
- Base Part Number :
- KSD288
- Voltage - Collector Emitter Breakdown (Max) :
- 55V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 5V
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Datasheets
- KSD288YTU
NPN 150°C TJ 50μA ICBO TO-220-3 Tube Through Hole
KSD288YTU Overview
DC current gain in this device equals 120 @ 500mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 1A.Product comes in TO-220-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSD288YTU Features
the DC current gain for this device is 120 @ 500mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the supplier device package of TO-220-3
KSD288YTU Applications
There are a lot of ON Semiconductor
KSD288YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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