KSD2012GTU
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- Mfr.Part #
- KSD2012GTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F-3
- Stock
- 31
- In Stock ：
- 31
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Power Dissipation :
- 25W
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 3MHz
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Max Collector Current :
- 3A
- hFE Min :
- 100
- Published :
- 2000
- Max Power Dissipation :
- 25W
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Transition Frequency :
- 3MHz
- Factory Lead Time :
- 14 Weeks
- Weight :
- 2.27g
- Collector Base Voltage (VCBO) :
- 60V
- Height :
- 15.87mm
- Packaging :
- Tube
- Width :
- 2.54mm
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.16mm
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Current Rating :
- 3A
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 400mV
- Package / Case :
- TO-220-3 Full Pack
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Mount :
- Through Hole
- Frequency :
- 3MHz
- Datasheets
- KSD2012GTU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
KSD2012GTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD2012GTU Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz
KSD2012GTU Applications
There are a lot of ON Semiconductor
KSD2012GTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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