KSD2012GTU
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- Mfr.Part #
- KSD2012GTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F-3
- Stock
- 31
- In Stock ：
- 31
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 15.87mm
- Factory Lead Time :
- 14 Weeks
- Width :
- 2.54mm
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 3MHz
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Max Collector Current :
- 3A
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Package / Case :
- TO-220-3 Full Pack
- Collector Emitter Voltage (VCEO) :
- 60V
- Weight :
- 2.27g
- Max Power Dissipation :
- 25W
- Packaging :
- Tube
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Transition Frequency :
- 3MHz
- Collector Emitter Saturation Voltage :
- 400mV
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Emitter Base Voltage (VEBO) :
- 7V
- Lead Free :
- Lead Free
- Length :
- 10.16mm
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 25W
- Mount :
- Through Hole
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 100
- Current Rating :
- 3A
- Published :
- 2000
- Voltage - Rated DC :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Contact Plating :
- Tin
- Frequency :
- 3MHz
- Datasheets
- KSD2012GTU
KSD2012GTU Documents
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
KSD2012GTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD2012GTU Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz
KSD2012GTU Applications
There are a lot of ON Semiconductor
KSD2012GTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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