KSD2012GTU
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- Mfr.Part #
- KSD2012GTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F-3
- Stock
- 31
- In Stock ：
- 31
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 7V
- Height :
- 15.87mm
- Voltage - Rated DC :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Width :
- 2.54mm
- Weight :
- 2.27g
- hFE Min :
- 100
- Mounting Type :
- Through Hole
- Transition Frequency :
- 3MHz
- Contact Plating :
- Tin
- Max Collector Current :
- 3A
- Gain Bandwidth Product :
- 3MHz
- Mount :
- Through Hole
- Current Rating :
- 3A
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2000
- Frequency :
- 3MHz
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-220-3 Full Pack
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Factory Lead Time :
- 14 Weeks
- Number of Elements :
- 1
- Length :
- 10.16mm
- Number of Terminations :
- 3
- Max Power Dissipation :
- 25W
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 400mV
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Power Dissipation :
- 25W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Number of Pins :
- 3
- Datasheets
- KSD2012GTU
KSD2012GTU Documents
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
KSD2012GTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD2012GTU Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz
KSD2012GTU Applications
There are a lot of ON Semiconductor
KSD2012GTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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