KSD2012GTU
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- Mfr.Part #
- KSD2012GTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F-3
- Stock
- 31
- In Stock ：
- 31
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 15.87mm
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Transition Frequency :
- 3MHz
- Current Rating :
- 3A
- Package / Case :
- TO-220-3 Full Pack
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 100
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 14 Weeks
- Emitter Base Voltage (VEBO) :
- 7V
- Frequency :
- 3MHz
- Collector Emitter Saturation Voltage :
- 400mV
- Published :
- 2000
- Power Dissipation :
- 25W
- Voltage - Rated DC :
- 60V
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Width :
- 2.54mm
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Length :
- 10.16mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Collector Current :
- 3A
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 25W
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Weight :
- 2.27g
- Datasheets
- KSD2012GTU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
KSD2012GTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
KSD2012GTU Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 3MHz
KSD2012GTU Applications
There are a lot of ON Semiconductor
KSD2012GTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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