KSD261CGBU
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- Mfr.Part #
- KSD261CGBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.5A TO92-3
- Stock
- 35,622
- In Stock ：
- 35,622
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Power - Max :
- 500mW
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Base Part Number :
- KSD261
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-92-3
- Packaging :
- Bulk
- Datasheets
- KSD261CGBU
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
KSD261CGBU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 1V.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-92-3 contains the product.The device has a 20V maximal voltage - Collector Emitter Breakdown.
KSD261CGBU Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the supplier device package of TO-92-3
KSD261CGBU Applications
There are a lot of ON Semiconductor
KSD261CGBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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