KSD261YBU
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- Mfr.Part #
- KSD261YBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.5A TO92-3
- Stock
- 18,535
- In Stock ：
- 18,535
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Collector Emitter Voltage (VCEO) :
- 20V
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Power - Max :
- 500mW
- Lead Free :
- Lead Free
- hFE Min :
- 120
- Voltage - Rated DC :
- 20V
- Packaging :
- Bulk
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 180mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Min Operating Temperature :
- -55°C
- Base Part Number :
- KSD261
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Max Operating Temperature :
- 150°C
- Max Power Dissipation :
- 500mW
- Polarity :
- NPN
- Current Rating :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 500mW
- Collector Base Voltage (VCBO) :
- 40V
- Current - Collector (Ic) (Max) :
- 500mA
- Weight :
- 178.2mg
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 20V
- Supplier Device Package :
- TO-92-3
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Datasheets
- KSD261YBU
NPN 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
KSD261YBU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 180mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.TO-92-3 is the supplier device package for this product.This device displays a 20V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 500mA volts.
KSD261YBU Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
the supplier device package of TO-92-3
KSD261YBU Applications
There are a lot of ON Semiconductor
KSD261YBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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