KSD261GBU
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- Mfr.Part #
- KSD261GBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.5A TO92-3
- Stock
- 37,159
- In Stock ：
- 37,159
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Supplier Device Package :
- TO-92-3
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Type :
- NPN
- Power - Max :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Datasheets
- KSD261GBU
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
KSD261GBU Overview
In this device, the DC current gain is 200 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 500mA.Product comes in the supplier's device package TO-92-3.There is a 20V maximal voltage in the device due to collector-emitter breakdown.
KSD261GBU Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the supplier device package of TO-92-3
KSD261GBU Applications
There are a lot of Rochester Electronics, LLC
KSD261GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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