KSC2785GTA
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- Mfr.Part #
- KSC2785GTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92S
- Stock
- 24,527
- In Stock ：
- 24,527
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Current - Collector (Ic) (Max) :
- 150mA
- Mounting Type :
- Through Hole
- Base Part Number :
- KSC2785
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 300MHz
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Power - Max :
- 250mW
- Supplier Device Package :
- TO-92S
- Datasheets
- KSC2785GTA
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Tape & Box (TB) Through Hole
KSC2785GTA Overview
In this device, the DC current gain is 200 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.Supplier device package TO-92S comes with the product.The device exhibits a collector-emitter breakdown at 50V.
KSC2785GTA Features
the DC current gain for this device is 200 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of TO-92S
KSC2785GTA Applications
There are a lot of ON Semiconductor
KSC2785GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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