KSC2073
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- Mfr.Part #
- KSC2073
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 1.5A TO220-3
- Stock
- 9,445
- In Stock ：
- 9,445
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Width :
- 4.5mm
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 4MHz
- Polarity/Channel Type :
- NPN
- Current Rating :
- 1.5A
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 4MHz
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Collector Current :
- 1.5A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Operating Temperature :
- 150°C TJ
- Weight :
- 1.8g
- Power Dissipation :
- 25W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 10V
- Base Part Number :
- KSC2073
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 150V
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 150V
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 150V
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Published :
- 2011
- hFE Min :
- 40
- Max Power Dissipation :
- 25W
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 150V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 4MHz
- Length :
- 9.2mm
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 8 Weeks
- Height :
- 14.2mm
- Datasheets
- KSC2073
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC2073TU Overview
In this device, the DC current gain is 40 @ 500mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
KSC2073TU Features
the DC current gain for this device is 40 @ 500mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 4MHz
KSC2073TU Applications
There are a lot of ON Semiconductor
KSC2073TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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