KSC2073
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- Mfr.Part #
- KSC2073
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 1.5A TO220-3
- Stock
- 9,445
- In Stock ：
- 9,445
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSC2073
- Current Rating :
- 1.5A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Number of Elements :
- 1
- Voltage - Rated DC :
- 150V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 150V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 40
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 150V
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 1.5A
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Transition Frequency :
- 4MHz
- Published :
- 2011
- Packaging :
- Tube
- Width :
- 4.5mm
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Frequency :
- 4MHz
- Package / Case :
- TO-220-3
- Collector Emitter Saturation Voltage :
- 1V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 4MHz
- Height :
- 14.2mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Weight :
- 1.8g
- Terminal Finish :
- Tin (Sn)
- Length :
- 9.2mm
- Max Power Dissipation :
- 25W
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 25W
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- KSC2073
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC2073TU Overview
In this device, the DC current gain is 40 @ 500mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
KSC2073TU Features
the DC current gain for this device is 40 @ 500mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 4MHz
KSC2073TU Applications
There are a lot of ON Semiconductor
KSC2073TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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