KSC2001GTA

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Mfr.Part #
KSC2001GTA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 25V 0.7A TO92-3
Stock
40,414
In Stock :
40,414

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
600mV @ 70mA, 700mA
Current - Collector Cutoff (Max) :
100nA ICBO
Frequency - Transition :
170MHz
Operating Temperature :
150°C TJ
Terminal Finish :
MATTE TIN
JESD-609 Code :
e3
Pbfree Code :
yes
Surface Mount :
No
Polarity/Channel Type :
NPN
Configuration :
Single
Peak Reflow Temperature (Cel) :
Not Applicable
JESD-30 Code :
O-PBCY-T3
Transition Frequency :
170MHz
Voltage - Collector Emitter Breakdown (Max) :
25V
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 1V
Current - Collector (Ic) (Max) :
700mA
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Packaging :
Tape and Box (TB)
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
RoHS Status :
ROHS3 Compliant
Power - Max :
600mW
Transistor Element Material :
SILICON
Number of Elements :
1
Reach Compliance Code :
Unknown
Qualification Status :
COMMERCIAL
Terminal Position :
BOTTOM
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Number of Terminations :
3
Datasheets
KSC2001GTA
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC2001GTA from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, Number of Terminations:3, KSC2001GTA pinout, KSC2001GTA datasheet PDF, KSC2001GTA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC2001GTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC2001GTA


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

KSC2001GTA Overview


In this device, the DC current gain is 200 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 70mA, 700mA.170MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 25V.

KSC2001GTA Features


the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 600mV @ 70mA, 700mA
a transition frequency of 170MHz


KSC2001GTA Applications


There are a lot of Rochester Electronics, LLC
KSC2001GTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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