KSC2752OSTU

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Mfr.Part #
KSC2752OSTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 400V 0.5A TO126-3
Stock
69
In Stock :
69

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
1V @ 60mA, 300mA
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
400V
Number of Pins :
3
Terminal Finish :
Tin (Sn)
Polarity/Channel Type :
NPN
Radiation Hardening :
No
Pbfree Code :
yes
Height :
11mm
Transistor Element Material :
SILICON
Package / Case :
TO-225AA, TO-126-3
Max Power Dissipation :
1W
Emitter Base Voltage (VEBO) :
7V
Weight :
761mg
Collector Emitter Voltage (VCEO) :
400V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
1V
Mounting Type :
Through Hole
ECCN Code :
EAR99
Power Dissipation :
1W
Factory Lead Time :
19 Weeks
Published :
2000
Number of Elements :
1
JESD-609 Code :
e3
Transistor Type :
NPN
Width :
3.25mm
Current - Collector Cutoff (Max) :
10μA ICBO
hFE Min :
20
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 5V
Max Collector Current :
500mA
Current Rating :
500mA
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Collector Base Voltage (VCBO) :
500V
Number of Terminations :
3
Voltage - Rated DC :
400V
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Length :
8mm
Element Configuration :
Single
Packaging :
Tube
Mount :
Through Hole
Datasheets
KSC2752OSTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC2752OSTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, KSC2752OSTU pinout, KSC2752OSTU datasheet PDF, KSC2752OSTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC2752OSTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC2752OSTU


NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

KSC2752OSTU Overview


In this device, the DC current gain is 30 @ 50mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 60mA, 300mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).Maximum collector currents can be below 500mA volts.

KSC2752OSTU Features


the DC current gain for this device is 30 @ 50mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 60mA, 300mA
the emitter base voltage is kept at 7V
the current rating of this device is 500mA


KSC2752OSTU Applications


There are a lot of ON Semiconductor
KSC2752OSTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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