KSC2752OSTU

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Mfr.Part #
KSC2752OSTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 400V 0.5A TO126-3
Stock
69
In Stock :
69

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current Rating :
500mA
Transistor Type :
NPN
Collector Emitter Saturation Voltage :
1V
Radiation Hardening :
No
Power Dissipation :
1W
Vce Saturation (Max) @ Ib, Ic :
1V @ 60mA, 300mA
Mount :
Through Hole
Max Collector Current :
500mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
500V
Pbfree Code :
yes
Published :
2000
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 50mA 5V
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Voltage - Rated DC :
400V
Current - Collector Cutoff (Max) :
10μA ICBO
Polarity/Channel Type :
NPN
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Emitter Base Voltage (VEBO) :
7V
RoHS Status :
ROHS3 Compliant
Width :
3.25mm
Terminal Finish :
Tin (Sn)
hFE Min :
20
Operating Temperature :
150°C TJ
Number of Pins :
3
ECCN Code :
EAR99
Number of Terminations :
3
Transistor Application :
SWITCHING
Package / Case :
TO-225AA, TO-126-3
Max Power Dissipation :
1W
Packaging :
Tube
Height :
11mm
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
400V
Collector Emitter Voltage (VCEO) :
400V
Length :
8mm
Element Configuration :
Single
Weight :
761mg
Number of Elements :
1
Mounting Type :
Through Hole
Factory Lead Time :
19 Weeks
Datasheets
KSC2752OSTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC2752OSTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, KSC2752OSTU pinout, KSC2752OSTU datasheet PDF, KSC2752OSTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC2752OSTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC2752OSTU


NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

KSC2752OSTU Overview


In this device, the DC current gain is 30 @ 50mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 60mA, 300mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).Maximum collector currents can be below 500mA volts.

KSC2752OSTU Features


the DC current gain for this device is 30 @ 50mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 60mA, 300mA
the emitter base voltage is kept at 7V
the current rating of this device is 500mA


KSC2752OSTU Applications


There are a lot of ON Semiconductor
KSC2752OSTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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