KSC2710GBU
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- Mfr.Part #
- KSC2710GBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.5A TO92S
- Stock
- 1,983
- In Stock ：
- 1,983
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Mounting Type :
- Through Hole
- Power - Max :
- 300mW
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Base Part Number :
- KSC2710
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 500mA
- Packaging :
- Bulk
- Supplier Device Package :
- TO-92S
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- KSC2710GBU
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Short Body Bulk Through Hole
KSC2710GBU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 1V.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-92S contains the product.The device has a 20V maximal voltage - Collector Emitter Breakdown.
KSC2710GBU Features
the DC current gain for this device is 200 @ 100mA 1V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the supplier device package of TO-92S
KSC2710GBU Applications
There are a lot of ON Semiconductor
KSC2710GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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