KSC2690AYSTU
- Mfr.Part #
- KSC2690AYSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 160V 1.2A TO126-3
- Stock
- 58,987
- In Stock :
- 58,987
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 160V
- Frequency :
- 155MHz
- Packaging :
- Tube
- Current Rating :
- 1.2A
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 400mV
- Collector Emitter Breakdown Voltage :
- 160V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 6 Weeks
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Mounting Type :
- Through Hole
- Width :
- 3.25mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 300mA 5V
- Element Configuration :
- Single
- Base Part Number :
- KSC2690A
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 160V
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation :
- 1.2W
- Weight :
- 761mg
- Package / Case :
- TO-225AA, TO-126-3
- Published :
- 2000
- Radiation Hardening :
- No
- Length :
- 8mm
- Lead Free :
- Lead Free
- Max Collector Current :
- 1.2A
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- hFE Min :
- 60
- Gain Bandwidth Product :
- 155MHz
- Max Power Dissipation :
- 1.2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- REACH SVHC :
- No SVHC
- Height :
- 11mm
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 160V
- JESD-609 Code :
- e3
- Transition Frequency :
- 155MHz
- Mount :
- Through Hole
- Datasheets
- KSC2690AYSTU

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
KSC2690AYSTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 300mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.2A.In the part, the transition frequency is 155MHz.A maximum collector current of 1.2A volts can be achieved.
KSC2690AYSTU Features
the DC current gain for this device is 160 @ 300mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.2A
a transition frequency of 155MHz
KSC2690AYSTU Applications
There are a lot of ON Semiconductor
KSC2690AYSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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