KSC2518O
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- Mfr.Part #
- KSC2518O
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220-3
- Stock
- 49,787
- In Stock ：
- 49,787
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power - Max :
- 40W
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2000
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 300mA, 1.5A
- Current - Collector (Ic) (Max) :
- 4A
- Supplier Device Package :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 5V
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Datasheets
- KSC2518O
NPN 150°C TJ 10μA ICBO TO-220-3 Bulk Through Hole
KSC2518O Overview
In this device, the DC current gain is 30 @ 300mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 300mA, 1.5A.Product comes in the supplier's device package TO-220-3.There is a 400V maximal voltage in the device due to collector-emitter breakdown.
KSC2518O Features
the DC current gain for this device is 30 @ 300mA 5V
the vce saturation(Max) is 1V @ 300mA, 1.5A
the supplier device package of TO-220-3
KSC2518O Applications
There are a lot of ON Semiconductor
KSC2518O applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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