KSC2383YTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 200mA 5V

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

160V

ECCN Code :

EAR99

Power Dissipation :

900mW

Current Rating :

1A

Voltage - Rated DC :

160V

Height :

8mm

Collector Emitter Saturation Voltage :

1.5V

Mount :

Through Hole

hFE Min :

60

JESD-609 Code :

e3

Published :

2002

REACH SVHC :

No SVHC

Operating Temperature :

150°C TJ

Weight :

371.1027mg

Max Power Dissipation :

900mW

Max Breakdown Voltage :

160V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

160V

Element Configuration :

Single

Max Collector Current :

1A

Collector Base Voltage (VCBO) :

160V

Packaging :

Tape and Box (TB)

Emitter Base Voltage (VEBO) :

6V

Base Part Number :

KSC2383

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Lead Free :

Lead Free

Factory Lead Time :

6 Weeks

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Number of Terminations :

3

Package / Case :

TO-226-3, TO-92-3 Long Body (Formed Leads)

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.9mm

Current - Collector Cutoff (Max) :

1μA ICBO

Frequency :

100MHz

Length :

4.9mm

Terminal Position :

BOTTOM

Transition Frequency :

100MHz

Transistor Element Material :

SILICON

Number of Elements :

1

Radiation Hardening :

No

Pbfree Code :

yes

Gain Bandwidth Product :

100MHz