KSC2383OTA
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- Mfr.Part #
- KSC2383OTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 1A TO92-3
- Stock
- 448
- In Stock ：
- 448
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 1.5V
- Collector Emitter Breakdown Voltage :
- 160V
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Current Rating :
- 1A
- Voltage - Rated DC :
- 160V
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- BOTTOM
- hFE Min :
- 60
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- KSC2383
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Power Dissipation :
- 900mW
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 160V
- Max Breakdown Voltage :
- 160V
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Weight :
- 371.1027mg
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 200mA 5V
- Max Power Dissipation :
- 900mW
- Datasheets
- KSC2383OTA
KSC2383OTA Documents
,TO-226_straightlead.jpg)
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2383OTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 200mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 160V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
KSC2383OTA Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 100MHz
KSC2383OTA Applications
There are a lot of ON Semiconductor
KSC2383OTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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