KSC2383OTA
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- Mfr.Part #
- KSC2383OTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 1A TO92-3
- Stock
- 448
- In Stock ：
- 448
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Power Dissipation :
- 900mW
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Voltage - Rated DC :
- 160V
- Collector Base Voltage (VCBO) :
- 160V
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Weight :
- 371.1027mg
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Factory Lead Time :
- 15 Weeks
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 1A
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 200mA 5V
- Transition Frequency :
- 100MHz
- Radiation Hardening :
- No
- hFE Min :
- 60
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 160V
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Base Part Number :
- KSC2383
- Max Power Dissipation :
- 900mW
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 160V
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Current Rating :
- 1A
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.5V
- Datasheets
- KSC2383OTA
,TO-226_straightlead.jpg)
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2383OTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 200mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 160V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
KSC2383OTA Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 100MHz
KSC2383OTA Applications
There are a lot of ON Semiconductor
KSC2383OTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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