KSC2383OBU
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- Mfr.Part #
- KSC2383OBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 160V 1A TO92-3
- Stock
- 41,842
- In Stock ：
- 41,842
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Weight :
- 185mg
- Power Dissipation :
- 900mW
- Supplier Device Package :
- TO-92-3
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 200mA 5V
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 1A
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Base Part Number :
- KSC2383
- Min Operating Temperature :
- -55°C
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- hFE Min :
- 60
- Max Operating Temperature :
- 150°C
- Frequency :
- 100MHz
- Frequency - Transition :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Collector Base Voltage (VCBO) :
- 160V
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 1A
- Collector Emitter Voltage (VCEO) :
- 160V
- Power - Max :
- 900mW
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 160V
- Number of Pins :
- 3
- Max Power Dissipation :
- 900mW
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 160V
- Polarity :
- NPN
- Collector Emitter Saturation Voltage :
- 1.5V
- Max Collector Current :
- 1A
- Mount :
- Through Hole
- Number of Elements :
- 1
- Datasheets
- KSC2383OBU
NPN 150°C TJ 1μA ICBO 1 Elements TO-226-3, TO-92-3 Long Body Bulk Through Hole
KSC2383OBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 200mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (160V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
KSC2383OBU Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
the supplier device package of TO-92-3
KSC2383OBU Applications
There are a lot of ON Semiconductor
KSC2383OBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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