KSC2331YTA
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- Mfr.Part #
- KSC2331YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Transition Frequency :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 371.1027mg
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 8V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Max Collector Current :
- 700mA
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Voltage - Rated DC :
- 60V
- Collector Emitter Saturation Voltage :
- 200mV
- Power Dissipation :
- 1W
- Factory Lead Time :
- 6 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Frequency :
- 50MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 1W
- Element Configuration :
- Single
- hFE Min :
- 40
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Base Part Number :
- KSC2331
- Current Rating :
- 700mA
- Operating Temperature :
- 150°C TJ
- Datasheets
- KSC2331YTA
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2331YTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 2V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 700mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 700mA volts at its maximum.
KSC2331YTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC2331YTA Applications
There are a lot of ON Semiconductor
KSC2331YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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