KSC2331YSHTA

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Mfr.Part #
KSC2331YSHTA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Datasheet
Download
Description
TRANS NPN 60V 0.7A TO92-3
Stock
24,622
In Stock :
24,622

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency :
50MHz
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Element Configuration :
Single
Number of Pins :
3
Number of Elements :
1
hFE Min :
40
Max Collector Current :
700mA
Voltage - Rated DC :
60V
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
200mV
Operating Temperature :
150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 50mA 2V
Max Power Dissipation :
1W
Weight :
178.2mg
Collector Base Voltage (VCBO) :
80V
Emitter Base Voltage (VEBO) :
8V
Base Part Number :
KSC2331
Gain Bandwidth Product :
50MHz
Transistor Type :
NPN
Mount :
Through Hole
Package / Case :
TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Collector Emitter Breakdown Voltage :
60V
Packaging :
Tape and Box (TB)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100nA ICBO
Power Dissipation :
1W
Collector Emitter Voltage (VCEO) :
60V
Current Rating :
700mA
Datasheets
KSC2331YSHTA
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC2331YSHTA from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Base Part Number:KSC2331, Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type:Through Hole, KSC2331YSHTA pinout, KSC2331YSHTA datasheet PDF, KSC2331YSHTA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC2331YSHTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC2331YSHTA


NPN 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole

KSC2331YSHTA Overview


In this device, the DC current gain is 120 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 8V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (700mA).Maximum collector currents can be below 700mA volts.

KSC2331YSHTA Features


the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA


KSC2331YSHTA Applications


There are a lot of ON Semiconductor
KSC2331YSHTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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