KSC2330YTA
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- Mfr.Part #
- KSC2330YTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO92-3
- Stock
- 17
- In Stock ：
- 17
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 300V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Transition Frequency :
- 50MHz
- Base Part Number :
- KSC2330
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 300V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Collector Emitter Voltage (VCEO) :
- 300V
- Frequency :
- 50MHz
- Current Rating :
- 100mA
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 300V
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 50MHz
- Number of Pins :
- 3
- hFE Min :
- 40
- Max Power Dissipation :
- 1W
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Through Hole
- Weight :
- 371.1027mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 20mA 10V
- Pbfree Code :
- yes
- Factory Lead Time :
- 6 Weeks
- Voltage - Rated DC :
- 300V
- Packaging :
- Tape and Box (TB)
- Datasheets
- KSC2330YTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2330YTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 20mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
KSC2330YTA Features
the DC current gain for this device is 120 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 50MHz
KSC2330YTA Applications
There are a lot of ON Semiconductor
KSC2330YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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