KSC2330YTA
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- Mfr.Part #
- KSC2330YTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO92-3
- Stock
- 17
- In Stock ：
- 17
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Max Collector Current :
- 100mA
- Frequency :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 300V
- Weight :
- 371.1027mg
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 500mV
- Voltage - Rated DC :
- 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 20mA 10V
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- KSC2330
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 50MHz
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- hFE Min :
- 40
- Max Breakdown Voltage :
- 300V
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Current Rating :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 300V
- Gain Bandwidth Product :
- 50MHz
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Voltage (VCEO) :
- 300V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Datasheets
- KSC2330YTA
KSC2330YTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2330YTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 20mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
KSC2330YTA Features
the DC current gain for this device is 120 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 50MHz
KSC2330YTA Applications
There are a lot of ON Semiconductor
KSC2330YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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