KSC2330YTA
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- Mfr.Part #
- KSC2330YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO92-3
- Stock
- 22
- In Stock ：
- 22
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSC2330
- Collector Emitter Voltage (VCEO) :
- 300V
- Power Dissipation :
- 1W
- Transition Frequency :
- 50MHz
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 20mA 10V
- Collector Base Voltage (VCBO) :
- 300V
- Emitter Base Voltage (VEBO) :
- 7V
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1W
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Frequency :
- 50MHz
- Max Breakdown Voltage :
- 300V
- Max Collector Current :
- 100mA
- Weight :
- 371.1027mg
- Packaging :
- Tape and Box (TB)
- Collector Emitter Breakdown Voltage :
- 300V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 300V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Factory Lead Time :
- 6 Weeks
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 100mA
- Gain Bandwidth Product :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- hFE Min :
- 40
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheets
- KSC2330YTA
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2330YTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 20mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
KSC2330YTA Features
the DC current gain for this device is 120 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 50MHz
KSC2330YTA Applications
There are a lot of ON Semiconductor
KSC2330YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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