KSC2330YTA
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- Mfr.Part #
- KSC2330YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO92-3
- Stock
- 22
- In Stock ：
- 22
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Weight :
- 371.1027mg
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 300V
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 40
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 500mV
- Power Dissipation :
- 1W
- Frequency :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 20mA 10V
- Transition Frequency :
- 50MHz
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 300V
- Factory Lead Time :
- 6 Weeks
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 50MHz
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Base Part Number :
- KSC2330
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 100mA
- Number of Terminations :
- 3
- Packaging :
- Tape and Box (TB)
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Voltage - Rated DC :
- 300V
- Max Breakdown Voltage :
- 300V
- Datasheets
- KSC2330YTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2330YTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 20mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
KSC2330YTA Features
the DC current gain for this device is 120 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 50MHz
KSC2330YTA Applications
There are a lot of ON Semiconductor
KSC2330YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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