KSC2330RBU
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- Mfr.Part #
- KSC2330RBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO92-3
- Stock
- 43,066
- In Stock ：
- 43,066
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Base Part Number :
- KSC2330
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Power - Max :
- 1W
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 50MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Current - Collector (Ic) (Max) :
- 100mA
- Datasheets
- KSC2330RBU
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
KSC2330RBU Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1mA, 10mA.The device exhibits a collector-emitter breakdown at 300V.
KSC2330RBU Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 1mA, 10mA
KSC2330RBU Applications
There are a lot of ON Semiconductor
KSC2330RBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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