KSC2330OTA
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- Mfr.Part #
- KSC2330OTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO92-3
- Stock
- 19,207
- In Stock ：
- 19,207
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 50MHz
- Collector Base Voltage (VCBO) :
- 300V
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 6 Weeks
- Current Rating :
- 100mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Mount :
- Through Hole
- Voltage - Rated DC :
- 300V
- Max Breakdown Voltage :
- 300V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Frequency :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 20mA 10V
- Terminal Finish :
- Tin (Sn)
- Weight :
- 371.1027mg
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Transition Frequency :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 300V
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- KSC2330
- hFE Min :
- 40
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Published :
- 2017
- JESD-609 Code :
- e3
- Power Dissipation :
- 1W
- Collector Emitter Saturation Voltage :
- 500mV
- Datasheets
- KSC2330OTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2330OTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 20mA 10V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 300V volts.When collector current reaches its maximum, it can reach 100mA volts.
KSC2330OTA Features
the DC current gain for this device is 70 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 50MHz
KSC2330OTA Applications
There are a lot of ON Semiconductor
KSC2330OTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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