KSC2328AYTA
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- Mfr.Part #
- KSC2328AYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 2A TO92-3
- Stock
- 6,045
- In Stock ：
- 6,045
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 3.9mm
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mount :
- Through Hole
- Base Part Number :
- KSC2328A
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 120MHz
- Voltage - Rated DC :
- 30V
- Height :
- 8mm
- Number of Pins :
- 3
- Frequency :
- 120MHz
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Power Dissipation :
- 1W
- Transition Frequency :
- 120MHz
- Length :
- 4.9mm
- Number of Terminations :
- 3
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 30V
- Current Rating :
- 2A
- hFE Min :
- 100
- Published :
- 2002
- Weight :
- 371.1027mg
- Max Power Dissipation :
- 1W
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 500mA 2V
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 30mA, 1.5A
- Factory Lead Time :
- 6 Weeks
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 2V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- KSC2328AYTA
KSC2328AYTA Documents
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2328AYTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 30mA, 1.5A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
KSC2328AYTA Features
the DC current gain for this device is 160 @ 500mA 2V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 120MHz
KSC2328AYTA Applications
There are a lot of ON Semiconductor
KSC2328AYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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