KSC2310OBU
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- Mfr.Part #
- KSC2310OBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.05A TO92-3
- Stock
- 36,408
- In Stock ：
- 36,408
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSC2310
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 50mA
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 800mW
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 10mA 5V
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Supplier Device Package :
- TO-92-3
- Transistor Type :
- NPN
- Frequency - Transition :
- 100MHz
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Datasheets
- KSC2310OBU
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
KSC2310OBU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 10mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.TO-92-3 is the supplier device package for this product.This device displays a 150V maximum voltage - Collector Emitter Breakdown.
KSC2310OBU Features
the DC current gain for this device is 70 @ 10mA 5V
the vce saturation(Max) is 500mV @ 1mA, 10mA
the supplier device package of TO-92-3
KSC2310OBU Applications
There are a lot of ON Semiconductor
KSC2310OBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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