KSA992FBU
- Mfr.Part #
- KSA992FBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.05A TO92-3
- Stock
- 17,189
- In Stock :
- 17,189
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -120V
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- hFE Min :
- 200
- Power Dissipation :
- 500mW
- Published :
- 2004
- Width :
- 3.86mm
- Max Collector Current :
- 50mA
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Height :
- 4.58mm
- Factory Lead Time :
- 7 Weeks
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 120V
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Base Part Number :
- KSA992
- Transistor Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1mA 6V
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Weight :
- 179mg
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -90mV
- Length :
- 4.58mm
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- -5V
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- -120V
- Collector Emitter Breakdown Voltage :
- 120V
- Packaging :
- Bulk
- REACH SVHC :
- No SVHC
- Current Rating :
- -50mA
- Current - Collector Cutoff (Max) :
- 1μA
- Max Power Dissipation :
- 500mW
- Datasheets
- KSA992FBU
,TO-226_straightlead.jpg)
PNP 150°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSA992FBU Overview
DC current gain in this device equals 300 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -90mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 1mA, 10mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -50mA current rating.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 50mA volts.
KSA992FBU Features
the DC current gain for this device is 300 @ 1mA 6V
a collector emitter saturation voltage of -90mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 100MHz
KSA992FBU Applications
There are a lot of ON Semiconductor
KSA992FBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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