KSA916YTA
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- Mfr.Part #
- KSA916YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A TO92-3
- Stock
- 35
- In Stock ：
- 35
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- -1V
- Max Breakdown Voltage :
- 120V
- Collector Emitter Voltage (VCEO) :
- 120V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 120V
- Mount :
- Through Hole
- Height :
- 8mm
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Length :
- 4.9mm
- Published :
- 2017
- Voltage - Rated DC :
- -120V
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 80
- Width :
- 3.9mm
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Gain Bandwidth Product :
- 120MHz
- Max Collector Current :
- 800mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- KSA916
- Collector Base Voltage (VCBO) :
- -120V
- Weight :
- 371.1027mg
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 120MHz
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 900mW
- Mounting Type :
- Through Hole
- Frequency :
- 120MHz
- Current Rating :
- -800mA
- Power Dissipation :
- 900mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 6 Weeks
- Datasheets
- KSA916YTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSA916YTA Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 120V volts can be used.A maximum collector current of 800mA volts is possible.
KSA916YTA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 120MHz
KSA916YTA Applications
There are a lot of ON Semiconductor
KSA916YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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