KSA916YTA
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- Mfr.Part #
- KSA916YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.8A TO92-3
- Stock
- 35
- In Stock ：
- 35
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 8mm
- Voltage - Rated DC :
- -120V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 900mW
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 120V
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 120MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transition Frequency :
- 120MHz
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- KSA916
- Element Configuration :
- Single
- hFE Min :
- 80
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 120V
- Max Breakdown Voltage :
- 120V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 900mW
- Max Collector Current :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current Rating :
- -800mA
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Frequency :
- 120MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Width :
- 3.9mm
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- -120V
- ECCN Code :
- EAR99
- Published :
- 2017
- Collector Emitter Saturation Voltage :
- -1V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Length :
- 4.9mm
- Weight :
- 371.1027mg
- Datasheets
- KSA916YTA
KSA916YTA Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSA916YTA Overview
This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 120V volts can be used.A maximum collector current of 800mA volts is possible.
KSA916YTA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 120MHz
KSA916YTA Applications
There are a lot of ON Semiconductor
KSA916YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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