KSA910YTA
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- Mfr.Part #
- KSA910YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.05A TO92-3
- Stock
- 44,429
- In Stock ：
- 44,429
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Transistor Type :
- PNP
- Frequency - Transition :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 1mA, 10mA
- Current - Collector (Ic) (Max) :
- 50mA
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 5V
- Base Part Number :
- KSA910
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 800mW
- Datasheets
- KSA910YTA
,TO-226_straightlead.jpg)
PNP 100nA ICBO TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSA910YTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 1mA, 10mA.Device displays Collector Emitter Breakdown (150V maximal voltage).
KSA910YTA Features
the DC current gain for this device is 120 @ 10mA 5V
the vce saturation(Max) is 800mV @ 1mA, 10mA
KSA910YTA Applications
There are a lot of ON Semiconductor
KSA910YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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