KSA733GBU
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- Mfr.Part #
- KSA733GBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 43,824
- In Stock ：
- 43,824
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Current Rating :
- -150mA
- ECCN Code :
- EAR99
- Transition Frequency :
- 180MHz
- Terminal Position :
- BOTTOM
- Weight :
- 179mg
- Polarity/Channel Type :
- PNP
- hFE Min :
- 40
- Base Part Number :
- KSA733
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 250mW
- Gain Bandwidth Product :
- 180MHz
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- -50V
- Collector Emitter Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Height :
- 4.58mm
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Radiation Hardening :
- No
- Power Dissipation :
- 250mW
- Width :
- 3.86mm
- Pbfree Code :
- yes
- Published :
- 2002
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 150mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Packaging :
- Bulk
- Frequency :
- 180MHz
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- -180mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Length :
- 4.58mm
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Base Voltage (VCBO) :
- -60V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- KSA733GBU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSA733GBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of -180mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -150mA.A transition frequency of 180MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
KSA733GBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 180MHz
KSA733GBU Applications
There are a lot of ON Semiconductor
KSA733GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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