KSA708YTA
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- Mfr.Part #
- KSA708YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.7A TO92-3
- Stock
- 42,383
- In Stock ：
- 42,383
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 50MHz
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- -80V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -60V
- Factory Lead Time :
- 6 Weeks
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Power Dissipation :
- 800mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 240mg
- Element Configuration :
- Single
- hFE Min :
- 40
- Published :
- 2007
- Base Part Number :
- KSA708
- Collector Emitter Saturation Voltage :
- -300mV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- -8V
- Max Breakdown Voltage :
- 60V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Transition Frequency :
- 50MHz
- Number of Elements :
- 1
- Max Collector Current :
- 700mA
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 800mW
- Current Rating :
- -700mA
- Gain Bandwidth Product :
- 50MHz
- Packaging :
- Tape and Box (TB)
- Datasheets
- KSA708YTA
KSA708YTA Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA708YTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 50mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -8V.Its current rating is -700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 700mA volts.
KSA708YTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -8V
the current rating of this device is -700mA
a transition frequency of 50MHz
KSA708YTA Applications
There are a lot of ON Semiconductor
KSA708YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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