KSA708YTA
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- Mfr.Part #
- KSA708YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.7A TO92-3
- Stock
- 42,383
- In Stock ：
- 42,383
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 800mW
- Transition Frequency :
- 50MHz
- Number of Elements :
- 1
- Max Power Dissipation :
- 800mW
- hFE Min :
- 40
- Published :
- 2007
- Max Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- -8V
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 50MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Current Rating :
- -700mA
- Weight :
- 240mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Collector Base Voltage (VCBO) :
- -80V
- Collector Emitter Saturation Voltage :
- -300mV
- Element Configuration :
- Single
- Base Part Number :
- KSA708
- Factory Lead Time :
- 6 Weeks
- Max Collector Current :
- 700mA
- Voltage - Rated DC :
- -60V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Datasheets
- KSA708YTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA708YTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 50mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -8V.Its current rating is -700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 700mA volts.
KSA708YTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -8V
the current rating of this device is -700mA
a transition frequency of 50MHz
KSA708YTA Applications
There are a lot of ON Semiconductor
KSA708YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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