KSA709GBU

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Mfr.Part #
KSA709GBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 150V 0.7A TO92-3
Stock
42,675
In Stock :
42,675

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
800mW
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
O-PBCY-T3
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 50mA 2V
Terminal Position :
BOTTOM
Pin Count :
3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Transition Frequency :
50MHz
Surface Mount :
No
Configuration :
Single
Frequency - Transition :
50MHz
Terminal Finish :
MATTE TIN
Current - Collector Cutoff (Max) :
100nA ICBO
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Packaging :
Bulk
JESD-609 Code :
e3
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
PNP
Peak Reflow Temperature (Cel) :
Not Applicable
Transistor Type :
PNP
Operating Temperature :
150°C TJ
Transistor Application :
AMPLIFIER
Reach Compliance Code :
Unknown
Qualification Status :
COMMERCIAL
Current - Collector (Ic) (Max) :
700mA
Mounting Type :
Through Hole
Pbfree Code :
yes
Voltage - Collector Emitter Breakdown (Max) :
150V
Vce Saturation (Max) @ Ib, Ic :
400mV @ 20mA, 200mA
Datasheets
KSA709GBU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA709GBU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:150°C TJ, Mounting Type:Through Hole, KSA709GBU pinout, KSA709GBU datasheet PDF, KSA709GBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA709GBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA709GBU


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

KSA709GBU Overview


DC current gain in this device equals 200 @ 50mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 200mA.As a result, the part has a transition frequency of 50MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

KSA709GBU Features


the DC current gain for this device is 200 @ 50mA 2V
the vce saturation(Max) is 400mV @ 20mA, 200mA
a transition frequency of 50MHz


KSA709GBU Applications


There are a lot of Rochester Electronics, LLC
KSA709GBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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