KSA708CYTA
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- Mfr.Part #
- KSA708CYTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.7A TO92-3
- Stock
- 10,513
- In Stock ：
- 10,513
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Transistor Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Published :
- 2001
- Packaging :
- Tape and Box (TB)
- Collector Emitter Saturation Voltage :
- -300mV
- hFE Min :
- 40
- Base Part Number :
- KSA708
- Max Breakdown Voltage :
- 60V
- Weight :
- 240mg
- Frequency :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.58mm
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 4.58mm
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -80V
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- -8V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Transition Frequency :
- 50MHz
- Max Power Dissipation :
- 800mW
- Max Collector Current :
- 700mA
- Current Rating :
- -700mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 800mW
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 50MHz
- Voltage - Rated DC :
- -60V
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Width :
- 3.86mm
- Datasheets
- KSA708CYTA
KSA708CYTA Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA708CYTA Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -8V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -700mA.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 700mA volts.
KSA708CYTA Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -8V
the current rating of this device is -700mA
a transition frequency of 50MHz
KSA708CYTA Applications
There are a lot of ON Semiconductor
KSA708CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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