JAN2N930
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- Mfr.Part #
- JAN2N930
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.03A TO18
- Stock
- 34,141
- In Stock ：
- 34,141
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Factory Lead Time :
- 23 Weeks
- Packaging :
- Bulk
- Pbfree Code :
- No
- Terminal Form :
- Wire
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Contact Plating :
- Lead, Tin
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Mount :
- Through Hole
- Max Collector Current :
- 30mA
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Qualified
- Transistor Element Material :
- SILICON
- Series :
- Military, MIL-PRF-19500/253
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10μA 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e0
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector Cutoff (Max) :
- 2nA
- Operating Temperature :
- -55°C~200°C TJ
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500μA, 10mA
- Datasheets
- JAN2N930
NPN -55°C~200°C TJ 2nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N930 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10μA 5V.When VCE saturation is 1V @ 500μA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.A maximum collector current of 30mA volts can be achieved.
JAN2N930 Features
the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 1V @ 500μA, 10mA
the emitter base voltage is kept at 6V
JAN2N930 Applications
There are a lot of Microsemi Corporation
JAN2N930 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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