JAN2N918UB/TR
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- Mfr.Part #
- JAN2N918UB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, Non-Standard
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.05A
- Stock
- 14,589
- In Stock ：
- 14,589
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Brand :
- Microchip / Microsemi
- Series :
- Military, MIL-PRF-19500/301
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3mA, 1V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Transistor Type :
- NPN
- Frequency - Transition :
- -
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Maximum Operating Temperature :
- + 200 C
- Mounting Style :
- SMD/SMT
- RoHS :
- N
- Package / Case :
- 3-SMD, Non-Standard
- Product Category :
- Bipolar Transistors - BJT
- Product Type :
- BJTs - Bipolar Transistors
- Manufacturer :
- Microchip
- Subcategory :
- Transistors
- Voltage - Collector Emitter Breakdown (Max) :
- 15 V
- Configuration :
- Single
- Package :
- Tape and Reel (TR)
- Technology :
- Si
- Transistor Polarity :
- NPN
- Power - Max :
- 200 mW
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 50 mA
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Minimum Operating Temperature :
- - 65 C
- Datasheets
- JAN2N918UB/TR
NPN -65°C ~ 200°C (TJ) 1μA (ICBO) 3-SMD, Non-Standard Surface Mount
JAN2N918UB/TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 3mA, 1V.When VCE saturation is 400mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 15 V maximal voltage - Collector Emitter Breakdown.
JAN2N918UB/TR Features
the DC current gain for this device is 20 @ 3mA, 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
JAN2N918UB/TR Applications
There are a lot of Microchip Technology
JAN2N918UB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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