JAN2N918UB
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- Mfr.Part #
- JAN2N918UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, Non-Standard
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.05A TO72
- Stock
- 6,438
- In Stock ：
- 6,438
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY B
- Published :
- 2007
- Terminal Form :
- NO LEAD
- Power Dissipation :
- 200mW
- Series :
- Military, MIL-PRF-19500/301
- Emitter Base Voltage (VEBO) :
- 3V
- Operating Temperature :
- -65°C~200°C TJ
- Pbfree Code :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-SMD, Non-Standard
- Transistor Element Material :
- SILICON
- Qualification Status :
- Qualified
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Factory Lead Time :
- 23 Weeks
- Pin Count :
- 3
- Max Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Collector Current :
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3mA 1V
- Mount :
- Surface Mount
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 15V
- Transistor Type :
- NPN
- JESD-609 Code :
- e0
- Contact Plating :
- Lead, Tin
- Number of Elements :
- 1
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 15V
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- JAN2N918UB
NPN -65°C~200°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, Non-Standard Bulk Surface Mount
JAN2N918UB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 3mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.During maximum operation, collector current can be as low as 50mA volts.
JAN2N918UB Features
the DC current gain for this device is 20 @ 3mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
JAN2N918UB Applications
There are a lot of Microsemi Corporation
JAN2N918UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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