JAN2N918
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- Mfr.Part #
- JAN2N918
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, Non-Standard
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.05A TO72
- Stock
- 20,922
- In Stock ：
- 20,922
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 23 Weeks
- Max Collector Current :
- 50mA
- Collector Emitter Breakdown Voltage :
- 15V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Emitter Base Voltage (VEBO) :
- 3V
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY B
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Qualification Status :
- Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 15V
- Transistor Type :
- NPN
- Pbfree Code :
- No
- Power Dissipation :
- 200mW
- Published :
- 2007
- Number of Terminations :
- 3
- Series :
- Military, MIL-PRF-19500/301
- Package / Case :
- 3-SMD, Non-Standard
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3mA 1V
- Terminal Form :
- NO LEAD
- Pin Count :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 200mW
- Terminal Position :
- Dual
- Packaging :
- Bulk
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Lead, Tin
- JESD-609 Code :
- e0
- Datasheets
- JAN2N918
NPN -65°C~200°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, Non-Standard Bulk Surface Mount
JAN2N918UB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 3mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.During maximum operation, collector current can be as low as 50mA volts.
JAN2N918UB Features
the DC current gain for this device is 20 @ 3mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
JAN2N918UB Applications
There are a lot of Microsemi Corporation
JAN2N918UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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