JAN2N7370

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Mfr.Part #
JAN2N7370
Manufacturer
Microchip Technology
Package / Case
TO-254-3, TO-254AA (Straight Leads)
Datasheet
Download
Description
TRANS NPN DARL 100V 12A TO254AA
Stock
5,435
In Stock :
5,435

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Pin Count :
3
Emitter Base Voltage (VEBO) :
5V
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
1mA
Current - Collector (Ic) (Max) :
12A
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Vce Saturation (Max) @ Ib, Ic :
3V @ 120mA, 12A
Number of Elements :
1
Package / Case :
TO-254-3, TO-254AA (Straight Leads)
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-65°C~200°C TJ
Polarity :
NPN
Terminal Form :
PIN/PEG
Pbfree Code :
No
Qualification Status :
Qualified
Published :
2007
Element Configuration :
Single
JESD-609 Code :
e0
RoHS Status :
Non-RoHS Compliant
Mount :
Through Hole
JESD-30 Code :
S-MSFM-P3
Terminal Finish :
Tin/Lead (Sn/Pb)
Packaging :
Bulk
Transistor Type :
NPN - Darlington
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 6A 3V
Series :
Military, MIL-PRF-19500/624
Mounting Type :
Through Hole
Case Connection :
Isolated
Collector Emitter Voltage (VCEO) :
100V
Power - Max :
100W
Collector Emitter Saturation Voltage :
3V
Collector Base Voltage (VCBO) :
100V
Datasheets
JAN2N7370
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N7370 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-254-3, TO-254AA (Straight Leads), Number of Terminations:3, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, JAN2N7370 pinout, JAN2N7370 datasheet PDF, JAN2N7370 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N7370 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON TO-254-3, TO-254AA (Straight Leads) Bulk Through Hole

JAN2N7370 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 6A 3V DC current gain.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.

JAN2N7370 Features


the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V


JAN2N7370 Applications


There are a lot of Microsemi Corporation
JAN2N7370 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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