JAN2N718A
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- Mfr.Part #
- JAN2N718A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO18
- Stock
- 28,335
- In Stock ：
- 28,335
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 500mW
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 7V
- RoHS Status :
- Non-RoHS Compliant
- Radiation Hardening :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Pbfree Code :
- No
- Max Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Qualification Status :
- Qualified
- Terminal Form :
- Wire
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 500mA
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Series :
- Military, MIL-PRF-19500/181
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 75V
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Configuration :
- Single
- Number of Pins :
- 3
- Published :
- 2007
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Datasheets
- JAN2N718A
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N718A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 15mA, 150mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.During maximum operation, collector current can be as low as 500mA volts.
JAN2N718A Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N718A Applications
There are a lot of Microsemi Corporation
JAN2N718A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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