JAN2N6989

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

Qualification Status :

Qualified

Published :

2007

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Contact Plating :

Lead, Tin

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PDIP-T14

Max Collector Current :

800mA

Collector Base Voltage (VCBO) :

75V

Package / Case :

14-DIP (0.300, 7.62mm)

Pbfree Code :

No

Configuration :

SEPARATE, 4 ELEMENTS

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

JEDEC-95 Code :

TO-116

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Polarity/Channel Type :

NPN

Mount :

Through Hole

Power - Max :

1.5W

Reference Standard :

MIL-19500/559F

Number of Terminations :

14

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Pin Count :

14

Operating Temperature :

-65°C~200°C TJ

Max Power Dissipation :

1.5W

Current - Collector Cutoff (Max) :

10μA ICBO

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

1V

Transistor Type :

4 NPN (Quad)

Series :

Military, MIL-PRF-19500/559

Terminal Position :

Dual

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e0

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Factory Lead Time :

23 Weeks