JAN2N6385
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- Mfr.Part #
- JAN2N6385
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 10A TO204AA
- Stock
- 6,499
- In Stock ：
- 6,499
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Contact Plating :
- Lead, Tin
- Mounting Type :
- Through Hole
- JESD-30 Code :
- O-MBFM-P2
- Current - Collector Cutoff (Max) :
- 1mA
- Current - Collector (Ic) (Max) :
- 10A
- RoHS Status :
- Non-RoHS Compliant
- Polarity :
- NPN
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Form :
- PIN/PEG
- Pbfree Code :
- No
- Package / Case :
- TO-204AA, TO-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 6W
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Qualification Status :
- Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 3V
- Number of Terminations :
- 2
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Published :
- 2002
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Collector Emitter Saturation Voltage :
- 2V
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Series :
- Military, MIL-PRF-19500/523
- Number of Elements :
- 1
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 22 Weeks
- Pin Count :
- 2
- Datasheets
- JAN2N6385
NPN - Darlington -55°C~175°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Through Hole
JAN2N6385 Overview
In this device, the DC current gain is 1000 @ 5A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 100mA, 10A.With the emitter base voltage set at 5V, an efficient operation can be achieved.
JAN2N6385 Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
JAN2N6385 Applications
There are a lot of Microsemi Corporation
JAN2N6385 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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