JAN2N6353
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- Mfr.Part #
- JAN2N6353
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 150V 5A TO66
- Stock
- 5,171
- In Stock ：
- 5,171
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Qualification Status :
- Qualified
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 10mA, 5A
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Number of Pins :
- 4
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-213AA, TO-66-3
- Collector Emitter Saturation Voltage :
- 2.5V
- Pbfree Code :
- No
- Factory Lead Time :
- 36 Weeks
- Emitter Base Voltage (VEBO) :
- 12V
- Collector Emitter Voltage (VCEO) :
- 150V
- Power - Max :
- 2W
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Transition Frequency :
- 50MHz
- Series :
- Military, MIL-PRF-19500/472
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- Published :
- 2002
- Number of Terminations :
- 3
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 5A
- Collector Base Voltage (VCBO) :
- 150V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 5V
- JESD-30 Code :
- O-MBCY-W3
- RoHS Status :
- Non-RoHS Compliant
- Terminal Form :
- Wire
- Datasheets
- JAN2N6353
NPN - Darlington -65°C~200°C TJ 1 Elements 3 Terminations SILICON TO-213AA, TO-66-3 Bulk Through Hole
JAN2N6353 Overview
DC current gain in this device equals 1000 @ 5A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 10mA, 5A.An emitter's base voltage can be kept at 12V to gain high efficiency.As a result, the part has a transition frequency of 50MHz.
JAN2N6353 Features
the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V
a transition frequency of 50MHz
JAN2N6353 Applications
There are a lot of Microsemi Corporation
JAN2N6353 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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