JAN2N6352

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Type :

MHz Crystal

Max Operating Temperature :

125 °C

Lifecycle Status :

Production (Last Updated: 2 months ago)

Series :

SXT214

Collector Emitter Voltage (VCEO) :

80 V

ESR (Equivalent Series Resistance) :

200 Ohms

Mount :

Through Hole

Operating Mode :

Fundamental

Height - Seated (Max) :

0.020 (0.50mm)

Frequency - Transition :

-

Packaging :

Bulk

Collector Base Voltage (VCBO) :

80 V

Current - Collector (Ic) (Max) :

5 A

Number of Elements :

1

Package :

Bulk

Power - Max :

2 W

Size / Dimension :

0.079 L x 0.063 W (2.00mm x 1.60mm)

Frequency Stability :

±30ppm

Current - Collector Cutoff (Max) :

-

Package / Case :

4-SMD, No Lead

Frequency Tolerance :

±20ppm

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 5A, 5V

Min Operating Temperature :

-55 °C

RoHS :

Non-Compliant

Transistor Type :

NPN - Darlington

Product Status :

Active

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

80 V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 5mA, 5A

Polarity :

NPN

Collector Emitter Saturation Voltage :

1.5 V

Supplier Device Package :

TO-66 (TO-213AA)

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

12 V

Operating Temperature :

-20°C ~ 70°C

Load Capacitance :

10pF

Frequency :

20 MHz

Element Configuration :

Single

Number of Pins :

4