JAN2N6351
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- Mfr.Part #
- JAN2N6351
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AC, TO-33-4 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN DARL 150V 5A TO33
- Stock
- 41,603
- In Stock ：
- 41,603
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Military, MIL-PRF-19500/472
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 10mA, 5A
- Collector Base Voltage (VCBO) :
- 150V
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -65°C~200°C TJ
- Radiation Hardening :
- No
- Turn On Time-Max (ton) :
- 500ns
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 150V
- Transistor Type :
- NPN - Darlington
- Current - Collector (Ic) (Max) :
- 5A
- Polarity :
- NPN
- Collector Emitter Saturation Voltage :
- 2.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 5V
- Power - Max :
- 1W
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Number of Elements :
- 1
- Number of Pins :
- 4
- Mount :
- Through Hole
- Package / Case :
- TO-205AC, TO-33-4 Metal Can
- Pin Count :
- 4
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 12V
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 4
- Pbfree Code :
- No
- Terminal Form :
- Wire
- Qualification Status :
- Qualified
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2007
- Datasheets
- JAN2N6351
NPN - Darlington -65°C~200°C TJ 1 Elements 4 Terminations SILICON TO-205AC, TO-33-4 Metal Can Bulk Through Hole
JAN2N6351 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 10mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.
JAN2N6351 Features
the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V
JAN2N6351 Applications
There are a lot of Microsemi Corporation
JAN2N6351 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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