JAN2N6300
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- Mfr.Part #
- JAN2N6300
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO66
- Stock
- 5,776
- In Stock ：
- 5,776
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Military, MIL-PRF-19500/539
- Package / Case :
- TO-213AA, TO-66-2
- Collector Emitter Saturation Voltage :
- 2V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-30 Code :
- O-MBFM-P2
- Operating Temperature :
- -55°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 4MHz
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A 3V
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Contact Plating :
- Lead, Tin
- Element Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pin Count :
- 2
- Power - Max :
- 75W
- Current - Collector (Ic) (Max) :
- 8A
- Mount :
- Through Hole
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 500μA ICBO
- Transistor Type :
- NPN - Darlington
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Qualified
- Number of Terminations :
- 2
- RoHS Status :
- Non-RoHS Compliant
- Terminal Form :
- PIN/PEG
- Factory Lead Time :
- 22 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 80mA, 8A
- Terminal Position :
- BOTTOM
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- JAN2N6300
NPN - Darlington -55°C~200°C TJ 500μA ICBO 1 Elements 2 Terminations SILICON TO-213AA, TO-66-2 Bulk Through Hole
JAN2N6300 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 4A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 4MHz.
JAN2N6300 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JAN2N6300 Applications
There are a lot of Microsemi Corporation
JAN2N6300 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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